C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation
- Resource Type
- Zhu, Xiaohua a; Bi, Te a; Yuan, Xiaolu b; Chang, Yuhao a; Zhang, Runming a; Fu, Yu a; Tu, Juping b; Huang, Yabo b; Liu, Jinlong b, ⁎; Li, Chengming b; Kawarada, Hiroshi a, c, ⁎
- In Applied Surface Science 15 August 2022 593
Highlights •A high channel hole mobility of 200 cm2V−1s−1 was achieved in C-Si interface (111) diamond MOSFETs.•The C-Si interface provides the MOSFETs with an excellent normally-off operation.•The advantage of boron doping in (111) diamond provides a large maximum current density.•The anatomically flat and strain-free interface between the (111) diamond and SiO2 film was confirmed by HRTEM.•The existence of C-Si bonds at the interface was proved by EELS and XPS.