InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET
- Resource Type
- Article
- Authors
- Cerba, T.; Hauchecorne, P.; Martin, M.; Moeyaert, J.; Alcotte, R.; Salem, B.; Eustache, E.; Bezard, P.; Chevalier, X.; Lombard, G.; Bassani, F.; David, S.; Beainy, G.; Tournié, E.; Patriarche, G.; Boutry, H.; Bawedin, M.; Baron, T.
- Source
- In Journal of Crystal Growth 15 March 2019 510:18-22
- Subject
- Language
- ISSN
- 0022-0248