High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser Annealing.
- Resource Type
- Article
- Source
- IEEE Electron Device Letters; Oct2014, Vol. 35 Issue 10, p1031-1033, 3p
- Subject
INDIUM gallium zinc oxide METALLIC oxide spectra PERFORMANCE of thin film transistors ELECTRIC properties of thin films INDUSTRIAL applications of excimer lasers ANNEALING furnaces - Language
- ISSN
- 07413106