A simple silicon compatible 40 nm electroplated copper T-gate process.
- Resource Type
- Article
- Authors
- Menglin Cao; Xu Li; Ferguson, Susan; Thoms, Stephen; MacIntyre, Douglas; Thayne, Iain
- Source
- Microelectronic Engineering. Jun2014, Vol. 121, p153-155. 3p.
- Subject
- *SILICON compounds
*ELECTROPLATING
*COPPER catalysts
*FABRICATION (Manufacturing)
*ELECTRON beam lithography
- Language
- ISSN
- 0167-9317
This paper reports a simple route to fabricating T-gate like structures with footprint of 40 nm using a copper electroplating process and a single electron beam lithography step without the need for lift-off. To our knowledge, these are the smallest such structures demonstrated using this approach which could also be implemented straightforwardly using conventional stepper or nanoimprint lithography for low cost, high volume silicon compatible manufacture. [ABSTRACT FROM AUTHOR]