Electrical properties of Al2O3 gate dielectrics
- Resource Type
- Article
- Authors
- Lin, Changhai; Kang, Jinfeng; Han, Dedong; Tian, Dayu; Wang, Wei; Zhang, Jinghua; Liu, Meng; Liu, Xiaoyan; Han, Ruqi
- Source
- Microelectronic Engineering. Apr2003, Vol. 66 Issue 1-4, p830. 5p.
- Subject
- *ALUMINUM oxide
*DIELECTRICS
- Language
- ISSN
- 0167-9317
Al2O3 gate dielectric thin films were deposited by reactive dc magnetron sputtering. The electrical properties and the carrier transport mechanisms were studied. The results indicate that higher temperature annealing in oxygen ambient is helpful to improve the electrical properties of Al2O3 gate dielectric films with few interfacial traps formed at the Al2O3/Si interface and the carrier transport mechanisms are dominate by thermionic emission. [Copyright &y& Elsevier]