Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment.
- Resource Type
- Article
- Authors
- Chang, Kuan-Chang; Chen, Jung-Hui; Tsai, Tsung-Ming; Chang, Ting-Chang; Huang, Syuan-Yong; Zhang, Rui; Chen, Kai-Huang; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Liao, Kuo-Hsiao; Tai, Ya-Hsiang; Young, Tai-Fa; Sze, Simon M.; Ai, Chi-Fong; Wang, Min-Chuan
- Source
- Journal of Supercritical Fluids. Jan2014, Vol. 85, p183-189. 7p.
- Subject
- *RANDOM access memory
*SUPERCRITICAL carbon dioxide
*SUPERCRITICAL fluids
*CHEMICAL bonds
*HYDRATION
*SILICON oxide films
*SCHOTTKY effect
- Language
- ISSN
- 0896-8446
Highlights: [•] The supercritical fluid treatment can efficiently reduce the operation current of resistance random access memory. [•] The dangling bonds of Sn:SiO x thin film were cross linking by the hydration–dehydration reaction by supercritical fluid treatment. [•] The current conduction mechanism of low resistance state in post-treated RRAM device was dominated by hopping conduction. [•] The current conduction mechanism of high resistance state in post-treated RRAM device was dominated by Schottky emission. [ABSTRACT FROM AUTHOR]