Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN.
- Resource Type
- Article
- Authors
- Baik, Kwang Hyeon; Kim, Hyonwoong; Kim, Jihyun; Jung, Sukkoo; Jang, Soohwan
- Source
- Applied Physics Letters. 8/26/2013, Vol. 103 Issue 9, p091107. 4p. 1 Black and White Photograph, 2 Graphs.
- Subject
- *ZINC oxide thin films
*LIGHT emitting diodes
*HETEROJUNCTIONS
*LOW temperatures
*GALLIUM nitride
*ELECTROLUMINESCENCE
*WAVELENGTHS
- Language
- ISSN
- 0003-6951
Nonpolar n-ZnO/p-GaN heterojunction light emitting diode has been demonstrated with a-plane ([formula]) ZnO active layer grown by a facile low-cost solution growth method at low temperature of 90 °C. High quality nonpolar ZnO planar film without seed layer was directly formed on a-plane GaN template due to the anisotropic growth rates along the specific crystallographic directions. The turn on voltage of the device was as low as 3 V, and narrow stable UV-blue electroluminescence emissions with peak wavelength of 392 to 420 nm under various forward bias conditions at room temperature were observed. [ABSTRACT FROM AUTHOR]