Effects of Si and Er Concentration on 1.54 μm Photoluminescence from Silica-Based Thin Films.
- Resource Type
- Article
- Authors
- Xiao, Zhisong; Xu, Fei; Cheng, Guoan; Zhang, Tonghe; Wong, S. P.
- Source
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics. 11/20/2002, Vol. 16 Issue 28/29, p4242. 4p.
- Subject
- *THIN films
*PHOTOLUMINESCENCE
*SILICON
*ERBIUM
*SILICA
- Language
- ISSN
- 0217-9792
Erbium doped SiO[sub 2] thin films containing Si nanocrystals were fabricated by Si and Er dual implantation into SiO[sub 2] using a metal vapor vacuum arc (MEVVA) ion source. Photoluminescence (PL) intensity was strongly enhanced by the incorporation of nanocrystalline Si (nc-Si) in the SiO[sub 2] films. For samples implanted with a fixed Er dose, there is an optimum Si dose to achieve a maximum 1.54 µm PL peak intensity, and likewise for samples implanted with a fixed Si dose, there is an optimum Er dose to achieve a maximum PL intensity. These results were discussed in terms of energy transfer mechanisms between the photogenerated carders in the nc-Si and Er ions in the SiO[sub 2] matrix. [ABSTRACT FROM AUTHOR]