The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory.
- Resource Type
- Article
- Authors
- Huang, Jen-Wei; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Chen, Hsin-Lu; Pan, Yin-Chih; Huang, Xuan; Zhang, Fengyan; Syu, Yong-En; Sze, Simon M.
- Source
- Applied Physics Letters. 5/20/2013, Vol. 102 Issue 20, p203507. 3p. 4 Graphs.
- Subject
- *RANDOM access memory
*COMPUTER storage devices
*ELECTROMAGNETIC fields
*ELECTRIC fields
*OHMIC resistance
*OHMIC contacts
*PERMITTIVITY
- Language
- ISSN
- 0003-6951
This letter investigated the electrical characteristics of resistance random access memory (RRAM) with HfO2/BN bilayer structures. By adopting the high/low permittivity structure, we obtained the excellent device characteristics such as uniform distribution of switching voltage and more stable resistance switching properties of RRAM. The current conduction mechanism of low resistance state in the HfO2/BN device was transferred to space-charge-limited current conduction from Ohmic conduction owing to space electric effect concentrated by the high/low permittivity bilayer structures. The electric field in the bilayer can be verified by comsol simulation software. [ABSTRACT FROM AUTHOR]