Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory.
- Resource Type
- Article
- Source
- IEEE Electron Device Letters; Mar2013, Vol. 34 Issue 3, p399-401, 3p
- Subject
SILICON oxide RANDOM access memory OHM'S law ELECTRIC resistance FERROELECTRIC RAM THIN films ZINC - Language
- ISSN
- 07413106