Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications.
- Resource Type
- Article
- Source
- IEEE Electron Device Letters; Dec2012, Vol. 33 Issue 12, p1696-1698, 3p
- Subject
NONVOLATILE random-access memory BIPOLAR integrated circuits DIELECTRICS SEMICONDUCTOR doping SILICON oxide NICKEL - Language
- ISSN
- 07413106