Theoretical study of GaN growth: A Monte Carlo approach.
- Resource Type
- Article
- Authors
- Wang, Kung; Singh, Jasprit; Pavlidis, Dimitris
- Source
- Journal of Applied Physics. 9/15/1994, Vol. 76 Issue 6, p3502. 9p. 1 Chart, 14 Graphs.
- Subject
- *GALLIUM nitride
*MOLECULAR beam epitaxy
- Language
- ISSN
- 0021-8979
Deals with a study which developed an atomistic model consistent with a variety of experimental observations for gallium nitride (GaN) growth by molecular-beam epitaxy. Monte Carlo approach and application of GaN growth modeling; Specific modeling issues related to GaN growth; Results of growth simulation and discussion.