Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory Performance.
- Resource Type
- Article
- Source
- Applied Sciences (2076-3417); Mar2024, Vol. 14 Issue 6, p2588, 10p
- Subject
INDIUM gallium zinc oxide MEMORY THRESHOLD voltage RECORDS management THIN film transistors TRANSISTORS - Language
- ISSN
- 20763417