Incorporating substitutional elements from groups I, II and IV is an important approach to improve the quality of kesterite thin films. Among the elements, Ag and Ge are most effective in promoting the performance of Cu2ZnSn(S,Se)4 solar cells. Although several theoretical and experimental studies have been conducted on the Ag/Ge-alloyed kesterite, there are significant differences in the reported morphological characteristics, photovoltaic performance and even the optimal Ag/Ge substitution ratio due to different preparation processes utilized, which leads to difficulties in comparing the Ag-incorporated and Ge-incorporated kesterite solar cells. Currently, there is little literature on the comparative study concerned. Herein, we fabricated Ag-alloyed and Ge-alloyed kesterite solar cells based on the same solution method and process conditions, and laterally compared the effects of Ag substitution and Ge substitution on the phase compositions, morphologies, optical bandgaps, minority carrier lifetime and device performance of kesterite Cu2ZnSn(S,Se)4 thin films. [ABSTRACT FROM AUTHOR]