Field-free magnetic switching dependence on lateral interfaces in synthetic antiferromagnets by ion implantation.
- Resource Type
- Article
- Authors
- Shen, Bowen; Yang, Meiyin; Li, Yanru; Yu, Peiyue; Gao, Jianfeng; Cui, Baoshan; Yu, Guoqiang; Luo, Jun
- Source
- Applied Physics Letters. Jan2024, Vol. 124 Issue 1, p1-7. 7p.
- Subject
- *MAGNETIC control
*ION implantation
*SYMMETRY breaking
*LOGIC devices
*SPIN-orbit interactions
*MAGNETIZATION
- Language
- ISSN
- 0003-6951
Field-free spin–orbit torque switching in synthetic antiferromagnets (SAF) holds significant promise for high-density spintronic memory and logic devices. In this paper, we realize the field-free magnetization switching in SAFs due to the local ion implantation-induced 45° lateral interface and symmetry breaking. Moreover, the magnetization switching ratio is enlarged by the lateral interface owing to the superimposition of a damping-like effective field and a symmetry-breaking effective field. Our work is significant for the development of magnetic random-access memory technology with high-speed and anti-interference ability. [ABSTRACT FROM AUTHOR]