Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High‑κ Metal Gates with Record High Performance.
- Resource Type
- Article
- Authors
- Xie, Lu; Zhu, Huilong; Zhang, Yongkui; Ai, Xuezheng; Li, Junjie; Wang, Guilei; Liu, Jinbiao; Du, Anyan; Yang, Hong; Yin, Xiaogen; Huang, Weixing; Li, Chen; Li, Yangyang; Wang, Qi; Lu, Shunshun; Kong, Zhenzhen; Xiang, Jinjuan; Du, Yong; Luo, Jun; Li, Junfeng
- Source
- ACS Nano; 11/28/2023, Vol. 17 Issue 22, p22259-22267, 9p
- Subject
- Language
- ISSN
- 19360851