In this paper, the effect of electron irradiation on analog and linearity performance for InP-based HEMT is investigated. The electron energy and fluence are 1 MeV and 1 × 1016 cm−2, respectively. The results show that the analog performance parameters, such as gm, gd, and TFG, indicate different variation trends after electron irradiation. Specifically, gm and gd are reduced, while TGF is increased. Therefore, the analog performance is improved for InP-based HEMT after electron irradiation. In addition, linearity metrics such as gm2, gm3, VIP2, VIP3, IIP3, and IMD3 have also been analyzed. The results indicate that the linearity performance improves for the device after electron irradiation. [ABSTRACT FROM AUTHOR]