Enhanced Performance of InGaN Light-Emitting Diodes via High-Quality GaN and Embedded Air Voids Grown on Hexagonal 3D Serpentine Mask Sapphire Substrates.
- Resource Type
- Article
- Source
- ACS Photonics; 9/20/2023, Vol. 10 Issue 9, p3233-3241, 9p
- Subject
- Language
- ISSN
- 23304022