Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT.
- Resource Type
- Article
- Source
- Crystals (2073-4352); Jan2023, Vol. 13 Issue 1, p90, 9p
- Subject
MODULATION-doped field-effect transistors GALLIUM nitride BREAKDOWN voltage HIGH voltages JOB descriptions - Language
- ISSN
- 20734352