Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review.
- Resource Type
- Article
- Source
- Micromachines; Dec2022, Vol. 13 Issue 12, p2133, 36p
- Subject
ALUMINUM gallium nitride MODULATION-doped field-effect transistors GALLIUM nitride FIELD-effect transistors OHMIC contacts OHMIC resistance - Language
- ISSN
- 2072666X