A Polyanionic Strategy to Modify the Perovskite Grain Boundary for a Larger Switching Ratio in Flexible Woven Resistive Random-Access Memories.
- Resource Type
- Article
- Source
- ACS Applied Materials & Interfaces; 10/5/2022, Vol. 14 Issue 39, p44652-44664, 13p
- Subject
- Language
- ISSN
- 19448244