Conduction mechanism and impedance analysis of HfO[formula omitted]-based RRAM at different resistive states.
- Resource Type
- Article
- Authors
- Bai, Jiao; Xie, Weiwei; Zhang, Weiqi; Yin, Zhipeng; Wei, Shengsheng; Qu, Dehao; Li, Yue; Qin, Fuwen; Zhou, Dayu; Wang, Dejun
- Source
- Applied Surface Science. Oct2022, Vol. 600, pN.PAG-N.PAG. 1p.
- Subject
- *CRYSTAL grain boundaries
*ACTIVATION energy
*COMPUTER storage devices
*IMPEDANCE spectroscopy
*SURFACE analysis
*TERAHERTZ spectroscopy
- Language
- ISSN
- 0169-4332
Conduction mechanism and impedance analysis of both the low resistance state (LRS) and high resistance state (HRS) are performed on TiN/HfO x /Pt resistive-switching memory devices at various temperatures. The dc conduction mechanism in LRS is dictated by Ohmic conduction, whereas by trap controlled space-charge-limited current conduction in HRS. The XPS analysis results on the surface of the HfO x film indicated the presence of oxygen deficiencies. The equivalent physical model under various resistance states is established by using ac impedance spectroscopy method, that is related to oxygen vacancies in the HfO x film. We further discussed the activation energy of dc and ac in the HRS and found the conduction occurs at the grain boundary. Through analysis of different resistance states of HfO x -based resistive switching memories, the conduction mechanism correlation between time and frequency domain is established. [Display omitted] • The equivalent physical models of HfO x -RRAM at different resistive states were proposed. • We analyzed the thermally conductive process of HfO x -RRAM in time and frequency domain. • The conduction mechanism correlation between time and frequency domain is established. • We deduce and verify the oxygen vacancy conductive filament model along grain boundaries. [ABSTRACT FROM AUTHOR]