−10 V Threshold Voltage High-Performance Normally-OFF C–Si Diamond MOSFET Formed by p + -Diamond-First and Silicon Molecular Beam Deposition Approaches.
- Resource Type
- Article
- Authors
- Fu, Yu; Chang, Yuhao; Kono, Shozo; Hiraiwa, Atsushi; Kanehisa, Kyotaro; Zhu, Xiaohua; Xu, Ruimin; Xu, Yuehang; Kawarada, Hiroshi
- Source
- IEEE Transactions on Electron Devices. May2022, Vol. 69 Issue 5, p2236-2242. 7p.
- Subject
- *METAL oxide semiconductor field-effect transistors
*MOLECULAR beams
*THRESHOLD voltage
*SCANNING transmission electron microscopy
*FIELD-effect transistors
*DIAMONDS
- Language
- ISSN
- 0018-9383
In this article, the normally- OFF oxidized Si-terminated (C–Si) diamond metal–oxide–semiconductor field-effect transistors (MOSFETs) with as-deposited 0.5-nm silicon on diamond annealed at high temperature as the subsurface p-channel were presented for the first time. A novel method utilizing both a metal mask to realize the regrown heavily boron-doped (001) diamond layer first (p+-diamond-first) and a molecular beam deposition (MBD) method to procure atomic-scale silicon deposition was achieved. Scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy (EDS) element mapping results suggest that the C–Si diamond/Al2O3 interface is quite continuous and atomically flat. A remarkably high threshold voltage (${V}_{\text{TH}}$) of −10 V and a maximum drain current density (${I}_{D\_{}{\text{MAX}}}$) of −156 mA/mm are simultaneously achieved in the fabricated devices. The devices with different source and drain (S/D) distances ($L_{\text{SD}}$) deliver robust ${V}_{\text{TH}}$ results and feature low OFF-state S/D leakage current $\vert {I}_{\text{leakage}}\vert $ of ~ $6\times10$ −6 mA/mm at ${V}_{\text{GS}}$ = 0 V. The extracted field-effect mobility is as high as 127 cm2 $\cdot \text{V}$ −1 $\cdot \text{s}$ −1 and the interface state density is as low as $4.35\times10$ 12 eV−1 $\cdot $ cm−2. These competitive results reveal that this first attempt of employing the combination of p+-diamond-first and MBD approaches promotes the integration of the advanced silicon manufacturing process with wide bandgap diamond material for power applications. [ABSTRACT FROM AUTHOR]