MOSFETs on (110) C–H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization.
- Resource Type
- Article
- Authors
- Liu, Benjian; Bi, Te; Fu, Yu; Kudara, Ken; Imanishi, Shoichiro; Liu, Kang; Dai, Bing; Zhu, Jiaqi; Kawarada, Hiroshi
- Source
- IEEE Transactions on Electron Devices. Mar2022, Vol. 69 Issue 3, p949-955. 7p.
- Subject
- *METAL oxide semiconductor field-effect transistors
*ATOMIC layer deposition
*TRANSMISSION electron microscopes
*FIELD-effect transistors
*DIAMOND crystals
*INTERFACE structures
*DIAMONDS
- Language
- ISSN
- 0018-9383
Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al2O3/(110) C–H diamond interface structure is of vital importance. MOSFETs with thin (10 nm) and thick (100 nm) ALD Al2O3 layer were made in this study. The microstructure of Al2O3 on (110) C–H diamond was analyzed. Abrupt interface of ALD Al2O3/C–H diamond was observed through high resolution transmission electron microscope (HRTEM). Cascode structure using diamond MOSFETs and enhancement mode silicon MOSFET is fabricated and its high performance is confirmed. [ABSTRACT FROM AUTHOR]