580 V Breakdown Voltage in Vertical Diamond Trench MOSFETs With a P − -Drift Layer.
- Resource Type
- Article
- Source
- IEEE Electron Device Letters; Jan2022, Vol. 43 Issue 1, p88-91, 4p
- Subject
METAL oxide semiconductor field-effect transistors BREAKDOWN voltage FIELD-effect transistors DIAMONDS HIGH voltages TRENCHES - Language
- ISSN
- 07413106