ScAlN/AlN Film-Based Lamé Mode Resonator With High Effective Electromechanical Coupling Coefficient.
- Resource Type
- Article
- Authors
- Zhou, Jie; Liu, Yan; Xu, Qinwen; Xie, Ying; Cai, Yao; Liu, Jieyu; Liu, Wenjuan; Tovstopyat, Alexander; Sun, Chengliang
- Source
- Journal of Microelectromechanical Systems. Oct2021, Vol. 30 Issue 5, p677-679. 3p.
- Subject
- *ALUMINUM nitride
*RESONATORS
*PIEZOELECTRIC composites
*FINITE element method
*BANDPASS filters
- Language
- ISSN
- 1057-7157
The effective electromechanical coupling coefficient (${K}_{eff}^{2}{)}$ of resonators is crucial for application in radio communication such as fabricating bandpass filters. In this letter, we present a $0^{\text {th}}$ symmetry (${S}_{0}{)}$ mode Lamé mode resonator (LMR) operating at 2.563 GHz with a high ${K}_{\vphantom {D_{j}}{eff}}^{2}$ of 7.83%. A 20% Scandium-doped Aluminum Nitride (Sc0.2Al0.8N)/AlN composite piezoelectric film is used as the piezoelectric layer. The ratio of piezoelectric layer thickness (${t}_{\vphantom {D_{j}}{pie}}{)}$ and electrode pitch (${P}_{ele}{)}$ is optimized by finite element analysis (FEA) method and the highest experimental ${K}_{eff}^{2}$ is obtained at ${t}_{pie}/{P}_{ele} =0.65$. The proposed LMR with Sc doping and structural optimization shows fascinating prospects for constructing broadband filters. [2021-0113] [ABSTRACT FROM AUTHOR]