First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High‑κ Metal Gates.
- Resource Type
- Article
- Authors
- Li, Chen; Zhu, Huilong; Zhang, Yongkui; Wang, Qi; Yin, Xiaogen; Li, Junjie; Wang, Guilei; Kong, Zhenzhen; Ai, Xuezheng; Xie, Lu; Liu, Yongbo; Li, Yangyang; Huang, Weixing; Yan, Zijin; Xiao, Zhongrui; Radamson, Henry H.; Li, Junfeng; Wang, Wenwu
- Source
- Nano Letters; 6/9/2021, Vol. 21 Issue 11, p4730-4737, 8p
- Subject
- Language
- ISSN
- 15306984