A novel micro‐silicon resonant pressure sensor with two mechanically coupled resonators is presented. When pressure acts on the diaphragm, the perturbed stress will cause stiffness perturbation, leading to mode‐localisation phenomenon. Therefore, pressure can be sensed by measuring the amplitude ratio shift. This novel structure is achieved by fabrication on silicon‐on‐insulator wafer. The measured result shows that the relative amplitude ratio shift (86,819.9 ppm/kPA) is 197.5 times higher than the shift in resonance frequency (439.6 ppm/kPA). [ABSTRACT FROM AUTHOR]