Solution-Processed Vertical Field-Effect Transistor with Separated Charge Generation and Charge Transport Layers for High-Performance Near-Infrared Photodetection.
- Resource Type
- Article
- Source
- ACS Applied Electronic Materials; 12/22/2020, Vol. 2 Issue 12, p3871-3879, 9p
- Subject
- Language
- ISSN
- 26376113