Application of 2DHG Diamond p-FET in Cascode With Normally-OFF Operation and a Breakdown Voltage of Over 1.7 kV.
- Resource Type
- Article
- Authors
- Bi, Te; Niu, Junxiong; Oi, Nobutaka; Inaba, Masafumi; Sasaki, Toshio; Kawarada, Hiroshi
- Source
- IEEE Transactions on Electron Devices. Oct2020, Vol. 67 Issue 10, p4006-4009. 4p.
- Subject
- *METAL oxide semiconductor field-effect transistors
*BREAKDOWN voltage
*FIELD-effect transistors
*DIAMOND surfaces
*DIAMOND crystals
*DIAMONDS
*HIGH voltages
*LOGIC circuits
- Language
- ISSN
- 0018-9383
Hydrogen-terminated (C-H) diamond has a high current density owing to the 2-D hole gas (2DHG) on its C-H diamond surface. The C-H diamond metal-oxide-semiconductor field-effect transistor (MOSFET) has high-breakdown-voltage characteristics but exhibits normally-ON operation. For security and energy-saving purposes, we fabricated the diamond cascode using the C-H diamond p-channel field-effect transistor (p-FET) combination with the normally- OFF silicon p-FET. The diamond cascode exhibits normally- OFF characteristics and a high breakdown voltage of more than 1.7-kV. [ABSTRACT FROM AUTHOR]