Hydrogen Diffusion and Threshold Voltage Shifts in Top-Gate Amorphous InGaZnO Thin-Film Transistors.
- Resource Type
- Article
- Authors
- Chen, Hong-Chih; Chen, Jian-Jie; Zhou, Kuan-Ju; Chen, Guan-Fu; Kuo, Chuan-Wei; Shih, Yu-Shan; Su, Wan-Ching; Yang, Chih-Cheng; Huang, Hui-Chun; Shih, Chih-Cheng; Lai, Wei-Chih; Chang, Ting-Chang
- Source
- IEEE Transactions on Electron Devices. Aug2020, Vol. 67 Issue 8, p3123-3128. 6p.
- Subject
- *INDIUM gallium zinc oxide
*THRESHOLD voltage
*TRANSISTORS
*DIFFUSION
*ACTIVATION energy
*HYDROGEN
- Language
- ISSN
- 0018-9383
The quality and stability of thin-film transistors (TFTs) applied to large-scale displays are crucial to their successful manufacture and commercial applicability. This article introduces a TFT manufacturing process in which the source/drain system is defined by hydrogen doping in the dielectric layer of the top-gate amorphous indium gallium zinc oxide (a-IGZO). A size effect related to this system exists where longer channels allow a greater amount of hydrogen to diffuse into the center of the channel. For shorter channels, this results in a lower energy barrier and a shift in the threshold voltage. A physical mechanism model is proposed to verify the abnormal electrical characteristics caused by hydrogen diffusion into the top-gate a-IGZO. The insights provided by these results can be used to further develop TFTs for use in large-scale display applications. [ABSTRACT FROM AUTHOR]