Impact of the Source-to-Drain Spacing on the DC and RF Characteristics of InGaAs/InAlAs High-Electron Mobility Transistors.
- Resource Type
- Article
- Source
- IEEE Electron Device Letters; Dec2018, Vol. 39 Issue 12, p1844-1847, 4p
- Subject
MODULATION-doped field-effect transistors ELECTRIC circuits - Language
- ISSN
- 07413106