We study the electronic local distribution and transports in pristine armchair-edge silicene nanoribbons (ASiNRs) based on the tight-binding approximation. By calculating the local densities of states at different sites and the bond current between two adjacent sites, we show that comparing to the pristine armchair-edge graphene nanoribbons, a similar '' rule and multiple low-electron transport channels exist in the pristine -ASiNRs. However, differently, they are controllable to appear and disappear by applying an electric field perpendicular to the ribbon plane. Therefore, one can manipulate the semiconducting channels and realize the current switch 'on/off,' unchanging their structures. Moreover, the results are robust against the edge-passivation and a few structural defects, which ensures their stability for the practical application in the silicene-based device. [ABSTRACT FROM AUTHOR]