Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors Under Negative Bias Stress.
- Resource Type
- Article
- Source
- IEEE Electron Device Letters; May2017, Vol. 38 Issue 5, p592-595, 4p
- Subject
AMORPHOUS semiconductors INDIUM gallium zinc oxide THIN film transistors - Language
- ISSN
- 07413106