Nitride passivation of the interface between high-k dielectrics and SiGe.
- Resource Type
- Article
- Authors
- Sardashti, Kasra; Kai-Ting Hu; Kechao Tang; Madisetti, Shailesh; McIntyre, Paul; Oktyabrsky, Serge; Siddiqui, Shariq; Sahu, Bhagawan; Naomi Yoshida; Kachian, Jessica; Lin Dong; Fruhberger, Bernd; Kummel, Andrew C.
- Source
- Applied Physics Letters. 1/1/2016, Vol. 108 Issue 1, p1-5. 5p. 1 Chart, 5 Graphs.
- Subject
- *SILICON compounds
*PASSIVATION
*NITRIDES
*INTERFACES (Physical sciences)
*DIELECTRICS
*NITRIDATION
- Language
- ISSN
- 0003-6951
In-situ direct ammonia (NH3) plasmanitridation has been used to passivate the Al2O3/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al2O3/SiGe interface shows that NH3plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasmanitridation at 300 °C. [ABSTRACT FROM AUTHOR]