Armstrong, A; Chakraborty, A; Speck, J S; DenBaars, S P; Mishra, U K; & Ringel, S A. (2006). Quantitative observation and discrimination of AlGaN-and GaN-related deep levels in AlGaN/GaN heterostructures using capacitance deep level optical spectroscopy. Applied Physics Letters, 89(26). UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/5x18790p
Brown, J S; Koblmuller, G; Averbeck, R; Riechert, H; & Speck, J S. (2006). Quadrupole mass spectrometry desorption analysis of Ga adsorbate on AIN (0001). Journal of Vacuum Science & Technology A, 24(6), 1979-1984. UC San Francisco: Retrieved from: http://www.escholarship.org/uc/item/61w8b5th
Chern, G D; Readinger, E D; Shen, H G; Wraback, M; Gallinat, C S; Koblmuller, G; et al.(2006). Excitation wavelength dependence of terahertz emission from InN and InAs. Applied Physics Letters, 89(14). UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/5jz3h5xg
McLaurin, M; Mates, T E; Wu, F; & Speck, J S. (2006). Growth of p-type and n-type m-plane GaN by molecular beam epitaxy. Journal of Applied Physics, 100(6). UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/52d8g7h0
Chakraborty, A; Kim, K C; Wu, F; Speck, J S; DenBaars, S P; & Mishra, U K. (2006). Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask. Applied Physics Letters, 89(4). UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/8z91c0hc
Arehart, A R; Moran, B; Speck, J S; Mishra, U K; DenBaars, S P; & Ringel, S A. (2006). Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics. Journal of Applied Physics, 100(2). UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/80v4n1nq