Peaker, A, Markevich, V & Coutinho, J 2018, ' Junction spectroscopy techniques and deep-level defects in semiconductors ', Journal of Applied Physics . https://doi.org/10.1063/1.5011327
Markevich, V, Vaqueiro Contreras, M, Lastovskii, S B, Murin, L I, Halsall, M & Peaker, A 2018, ' Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques ', Journal of Applied Physics . https://doi.org/10.1063/1.5053805
Mullins, J, Leonard, S, Markevich, V, Hawkins, I, Santos, P, Coutinho, J, Marinopoulos, A, Murphy, D, Halsall, M & Peaker, A 2017, ' Recombination via transition metals in solar silicon: the significance of hydrogen-metal reactions and lattice sites of metal atoms ', Physica Status Solidi. A: Applications and Materials Science, vol. 214, no. 7, 1700304 . https://doi.org/10.1002/pssa.201700304
Lastovskii, S B, Gusakov, V E, Markevich, V, Peaker, A, Yakushevich, H S, Korshunov, F P & Murin, L I 2017, ' Radiation-induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics ', Physica Status Solidi. A: Applications and Materials Science . https://doi.org/10.1002/pssa.201700262
Coutinho, J, Santos, P, Öberg, S, Vaqueiro Contreras, M, Markevich, V, Halsall, M & Peaker, A 2017, ' Theory of a carbon-oxygen-hydrogen recombination center in n-type Si ', Physica Status Solidi. A: Applications and Materials Science, vol. 214, no. 7, 1700309 . https://doi.org/10.1002/pssa.201700309
Gusakov, V E, Lastovskii, S B, Murin, L I, Tolkacheva, E A, Khirunenko, L I, Sosnin, M G, Duvanskii, A V, Markevich, V, Halsall, M, Peaker, A, Kolevatov, I, Ayedh, H M, Monakhov, E V & Svensson, B G 2017, ' The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms ', Physica Status Solidi. A: Applications and Materials Science . https://doi.org/10.1002/pssa.201700261
Grant, N, Markevich, V, Mullins, J, Peaker, A, Rougieux, F & Macdonald, D 2016, ' Thermal activation and deactivation of grown-in defects limiting the lifetime of float zone silicon ', Physica Status Solidi-Rapid Research Letters, vol. 10, no. 6, pp. 443–447 . https://doi.org/10.1002/pssr.201600080
Mullins, J, Markevich, V, Halsall, M & Peaker, A 2016, ' Interactions of hydrogen with vanadium in crystalline silicon ', Physica Status Solidi (A) Applications and Materials Science, vol. 213, no. 11, pp. 2838-2843 . https://doi.org/10.1002/pssa.201600493