Atmospheric in situ arsenic-doped SiGe selective epitaxial growth for raised-extension N-type metal-oxide-semiconductor field-effect transistor
- Resource Type
- Journal
- Source
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS ; APR 2007, 46 4B, p1916-p1920, 5p.- Subject
- Language
- English
- ISSN
- 00214922