Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition
- Resource Type
- Journal
- Source
JOURNAL OF APPLIED PHYSICS ; NOV 14 2014, 116 18, p183704 6p.- Subject
- Language
- English
- ISSN
- 10897550