High reliability of 0.1 mu m InGaAs/InAlAs/InP high electron mobility transistors microwave monolithic integrated circuit on 3-inch InP substrates
- Resource Type
- Journal
- Source
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS ; FEB 2002, 41 2B, p1099-p1103, 5p.- Subject
- Language
- English
- ISSN
- 00214922