Quick-low-density parity check and dynamic threshold voltage optimization in 1X nm triple-level cell NAND flash memory with comprehensive analysis of endurance, retention-time, and temperature variation
- Resource Type
- Journal
- Source
JAPANESE JOURNAL OF APPLIED PHYSICS ; AUG 2016, 55 8, p084201 10p.- Subject
- Language
- English
- ISSN
- 13474065