Because of the excellent properties such as wide band gap (high breakdown voltage), high thermal conductivity of SiC wafer, SiC power devices are widely used for motor cars, bullet trains, home consumption devises such as air conditioner, cooler generator, solar system etc. Because ion implanter is a key tool of the chip manufacturing line, power devices chip makers require higher and higher effective throughput to high temperature ion implanters to improve their manufacturing capability and efficiency. A new higher temperature ion implanter, IMPHEAT®-II, having 3 times higher mechanical throughput and 2 times of higher effective throughput was developed. In this paper, the basic performance of IMPHEAT®-II will be presented.Graphical abstract: Silicon carbide (SiC) wafers are widely used for the production of power devices. More and more SiC based power devices are being implemented for producing power modules used in electric motors, bullet trains, solar panels, home electronic appliances, etc. In order to meet all of these needs, power device makers require higher throughput tools to manufacture the devices more economically. We developed a new high temperature ion implanter having three times higher mechanical throughput and 2 times higher effective throughput @ 500 °C compared with our former tool IMPHEAT. We named it IMPHEAT-II, the second generation of high temperature ion implanter for SiC based power devices. Figure 1 is a photo of IMPHEAT-II. The basic layout has not been modified from IMPHEAT. Compared to IMPHEAT, IMPHEAT-II has the following improvements, (1) by introducing Hydrogen co-gas, we were able to increase beam current 2 times higher with much more stable condition for Al. (2) The wafer handling system has been improved drastically as well. A preheating unit has been added to the Load-Lock chamber 1 (L/L1) to reduce the wafer heating time on platen. Improvements have also been implemented to make it possible for the vacuum robot to carry out multi-tasks and increase the mechanical throughput. Wafers are cooled down in Load-Lock chamber 2 (L/L2) after being implanted, and L/L2 has a much quicker and stable wafer cooling down process. These improvements have increased the mechanical throughput of IMPHEAT-II 3 times higher than that of IMPHEAT. As a result from these improvements, IMPHEAT-II has the highest effective productivity for SiC power device manufacturing requirements.Fig. 1 A photo of IMPHEAT-II.