Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
- Resource Type
- article
- Authors
- Sarma, R.; Saikia, D.; Saikia, Puja; Saikia, P.K.; Baishya, B.
- Source
- Brazilian Journal of Physics. September 2010 40(3)
- Subject
- Pentacene
Organic Thin Film Transistors
Low Threshold voltage
Rare earth oxide Nd2O3
Two Step Deposition
- Language
- English
- ISSN
- 0103-9733
We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10(4) and mobility is 0.13cm²/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature.