Here we report electrical detection of magnetic domain wall in Hall bar structure in various wire dimensions within perpendicular magnetic anisotropy system. To examine as many as possible device structures in one coupon sample, wire width and Hall bar width combination was arranged as 8 by 5 matrix. Using Dc magnetron sputtering, our conventional perpendicular magnetic anisotrpy thin film Ta [5 nm] / Pt [2.5 nm] / Co [0.3 nm] / Pt [1.5 nm] trilayer structure was deposited on the commercial Si [525μm] / SiO₂ [100 nm] diced to 12 mm by 12 mm wafer substrate. Then Hall bar pattern was transferred to this film by using photolithograpy and ion milling process. And finally electrode pattern was also tranferred followed by Ta [5 nm] / Au [80 nm] electrode deposition and lift off process. Now in this microstructure, magnetic domain wall position was optically detected by laser p-MOKE with anomalous Hall signal simultaneously. Wire width dimension (WM) is assigned as [40, 30, 25, 20, 15, 10, 5, 2 μm] and Hall bar width (WH) is assigned as [10, 8, 6, 4, 2 μm]. Hall signal of magnetic domain wall was fitted as a*tanh{b(x-c)} and if the value of a reach 90 % of total anomalous Hall signal, detection range of magnetic domain (R) is defined as [2tanh-1(0.9)/b] . Fig. 1 is our example data of Hall signal versus position of magnetic domain wall (DW). Interestingly, maximum value of ratio between detection range and Hall bar width was 23.4 which is very seneitive to the position of magnetic domain wall. In conclusion by measuring the detection range of magnetic domain wall via anomalous Hall signal in diverse wire dimensions, we investigate the sensitivity of anomalous Hall signal to magnetic domain wall position. 〈그림 본문참조〉