A Highly Crystalline Semiconducting Polymers by Using Eutectic Friction Transfer Lithography
- Resource Type
- Conference
- Authors
- 엄상원; 박소영; 강영종
- Source
- 한국고분자학회 학술대회 연구논문 초록집. 2021-04 46(1):75-75
- Subject
- Language
- Korean
- ISSN
- 2384-0307
2508-4704
We report a solid-state lithography technique utilizing the eutectic friction transfer (EFT). eutectic friction transfer (EFT) is based on the eutectic melting by frictional heating at the interface between the pellet made of semiconducting polymer/matrix mixture and the substrate. Due to the significantly lowered melting temperature by formation of eutectic mixtures (< 65 °C), various semiconducting polymers can be easily melted and transferred on the substrate simply by rubbing the pellet on the substrate. in this case, semiconducting polymer chains can be uniaxially aligned and crystallized by the frictional shear force. Various semiconducting polymer crystals formed by simple rubbing process at mild condition. Strong anisotropic optical properties suggest that J-type packing is dominant in EFTL microwires because of the highly extended and planarized crystal structures.