Amorphous silicon crystallization using combined beams from optically pumped semiconductor lasers
- Resource Type
- Patent
- Authors
- Source
- Subject
- Language
An amorphous silicon layer on a glass substrate is crystallized by concentrating CW radiation from a number of OPS-lasers into a line of light on the layer. The layer is moved with respect to the line of light to control the dwell time of the line on any location on the layer and to crystallize an extended area of the layer.