POWER MOSFET AND FABRICATING METHOD THEREOF
- Resource Type
- Patent
- Authors
- Source
- Subject
- Language
A power MOSFET is disclosed. In the power MOSFET, an epitaxial layer doped with dopants of a first conduction type is formed on a substrate. A first trench extends downward from a first region of the top surface of the epitaxial layer, and a second trench extends downward from the bottom of the first trench. The width of the second trench is smaller than that of the first trench. The first well is located adjacent to the bottom of the first trench and the bottom of the second trench, and is doped with dopants of a second conduction type. The second well extends downward from a second region of the top surface and is doped with dopants of the second conduction type. The first well and the second well are separated. A source region doped with dopants of the first conduction type is formed in the second well.