TRENCH POWER MOSFET STRUCTURE WITH HIGH CELL DENSITY AND FABRICATION METHOD THEREOF
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A fabrication method of a high cell density trench power MOSFET structure is provided. Form at least a gate trench in a silicon substrate and a gate dielectric layer on the silicon substrate. Form a gate polysilicon structure in the gate trench and cover by a passivation layer. Form a first-conductive-type body region in the silicon substrate and implant impurities with a second conductive type thereof to form a source doped region. Expose the gate polysilicon structure and the source doped region. Form a dielectric spacer having a predetermined thickness on a sidewall of the gate trench. Deposit metal on the gate polysilicon structure and the source doped region. A first and a second self-aligned silicide layer are respectively formed on the gate polysilicon structure and the source doped region. The dielectric spacer forms an appropriate distance between the first and the second self-aligned silicide layer.