160-190 GHz Monolithic Low Noise Amplifiers
- Resource Type
- Report
- Authors
- Barsky, M; Allen, B; Liu, P; Streit, D; Block, T; Sholley, M; Chen, Y; Lai, R; Huang, T; Wang, H; Kok, Y; Gaier, T; Samoska, L
- Source
- Subject
- Language
- English
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07 meu pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process.