In this article, the appealing application of the CdS/Si nanowire heterostructure asthe self-driven photodetector was presented based on a facile successive ioniclayer absorption and reaction. Compared to CdS /Si planar based device,photocurrent illuminated with light (532 nm) to dark-current ratio was enhancedsignificantly for CdS/Si nanowire based detector. Measurements of time resolvedresponses at zero bias were conducted, and the result also demonstrated that CdS/Si nanowire heterostructure had a high photosensitivity and fast photo-responseas the self-driven visible light photodetector. Additionally, the correspondingmechanism for the phenomenon was discussed, and it is believed that such a highphotoresponse comes from the improved optical absorption as well as the goodcarrier transfer and collection capability. The present CdS/Si core-shellheterojunction architectures are envisaged as potentially valuable candidates fornext-generation photodectors.
In this article, the appealing application of the CdS/Si nanowire heterostructure asthe self-driven photodetector was presented based on a facile successive ioniclayer absorption and reaction. Compared to CdS /Si planar based device,photocurrent illuminated with light (532 nm) to dark-current ratio was enhancedsignificantly for CdS/Si nanowire based detector. Measurements of time resolvedresponses at zero bias were conducted, and the result also demonstrated that CdS/Si nanowire heterostructure had a high photosensitivity and fast photo-responseas the self-driven visible light photodetector. Additionally, the correspondingmechanism for the phenomenon was discussed, and it is believed that such a highphotoresponse comes from the improved optical absorption as well as the goodcarrier transfer and collection capability. The present CdS/Si core-shellheterojunction architectures are envisaged as potentially valuable candidates fornext-generation photodectors.